Porous silicon is actively used in the fabrication of sensors and detectors because of its large specific surface area, which is an important characteristic for gas adsorption. To improve the operating parameters of the sensors and increase the stability of operation, a film of tin oxide was deposited on the substrate of porous silicon by vacuum-thermal evaporation. The choice of tin is due to its wide forbidden zone, low cost, and high sensitivity. Porous silicon was obtained by the electrochemical anodization of single-crystalline silicon KEF (100). The data on morphology, composition and optical properties of the initial sample of porous silicon and the sample with deposited tin have been obtained by scanning electron microscopy, infrared and photoluminescence spectroscopy. It was found that the chemical tin deposition on porous silicon leads to the formation of composite structure, which significantly prevents further oxidation of the porous layer during storage, and to the shift of the luminescence band maximum

doi.org/10.32737/0005-2531-2023-3-83-89