ELECTRIC CONDUCTANCE AND EFFECT OF NERNS–ETTENGSHANZEN OF THE YbxGa1–xSb (0≤ x ≤0.05) SYSTEM ALLOYS
Research of solid solution on the basis of GaSb of an alloys of YbxGa1–xSb (0≤ x ≤0.05) system has been carried out at temperature Т = 300 K, and also in a wide temperature interval (100–1000 К). For definition of the mechanism of dispersion of the carrier of a current Nerns–Ettengshanzen effect is measured in this sample. Weak magnetic fields are defined from the formula . If r <1 or r >1 it can be assumed that dispersion of a current carrier from alloyed ions take place at temperature (200–250) K and at more high temperature (~550 K) at dispersion – from lattice thermal fluctuations.
Keywords : lectro conductivity, system alloys, dispersion mechanism, solid solution
View article
SUBMITION
THE LAST NUMBER OF THE JOURNAL
№2 2026CONTENT
- EFFECT OF DEPOSITION CONDITIONS ON THE COMPOSITION OF CdS THIN FILMS FROM A NON-AQUEOUS ETHYLENE GLYCOL ELECTROLYTE- KINETICS AND MECHANISM OF THE PARTIAL OXIDATION OF PROPANE TO LOW-MOLECULAR CARBONYL COMPOUNDS ON A MODIFIED ZEOLITE CATALYSTMore








.png)